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  ? 2015-2016 microchip technology inc. ds20005415c-page 1 mcp1711 features ? low quiescent current: 600 na ? input voltage range: 1.4v to 6.0v ? standard output voltages : 1.2v, 1.8v, 1.9v, 2.2v, 2.5v, 3.0v, 3.3v, 5.0v ? output accuracy: 20 mv for 1.2v and 1.8v options and 1% for v r > 2.0v ? temperature stability: 50 ppm/c ? maximum output current: 150 ma ? low on resistance: 3.3 ? @ v r = 3.0v ? standby current: 10 na ? protection circuits: current limiter, short circuit, foldback ? shdn pin function: on/off logic = enable high ?c out discharge circuit when shdn function is active ? output capacitor: low equivalent series resistance (esr) ceramic, capacitorless compatible ? operating temperature: -40c to +85c (industrial) ? available packages: - 4-lead 1 x 1 mm uqfn - 5-lead sot-23 ? environmentally friendly: eu rohs compliant, lead-free applications ? energy harvesting ? long-life, battery-powered applications ? portable electronics ? ultra-low consumpt ion ?green? products ? mobile devices/terminals ? wireless lan ? modules (wireless, cameras) related literature ? an765 , using microchip?s micropower ldos (ds00765), microchip technology inc. ? an766, pin-compatible cmos upgrades to bipolar ldos (ds00766), microchip technology inc. ? an792, a method to determ ine how much power a sot23 can dissipate in an application (ds00792), microchip technology inc. general description the mcp1711 is a highly accurate cmos low dropout (ldo) voltage regulator that can deliver up to 150 ma of current while consuming only 0.6 a of quiescent current (typical). the input operating range is specified from 1.4v to 6.0v, making it an ideal choice for mobile applications and one-cell li-ion powered applications. the mcp1711 is capable of delivering 150 ma output current with only 0.32v (typical) for v r = 5.0v, and 1.41v (typical) for v r = 1.2v of input-to-output voltages differential. the output voltage accuracy of the mcp1711 is typically 0.02v for v r < 2.0v and 1% for v r > 2.0v at +25c. the temperature stability is approximately 50 ppm/c. line regulation is 0.01%/v typical at +25c. the output voltages available for the mcp1711 range from 1.2v to 5.0v. the ldo output is stable even if an output capacitor is not connected, due to an excellent internal phase compensation. however, for better tran- sient responses, the output capacitor should be added. the mcp1711 is compatible with low esr ceramic output capacitors. overcurrent limit and short-circuit protection embed- ded into the device provide a robust solution for any application. the mcp1711 has a true cu rrent foldback feature. when the load decreases beyond the mcp1711 load rating, the output current and output voltage will foldback toward 80 ma (typ ical) at approximately 0v output. when the load impedance increases and returns to the rated load, the mcp1711 will follow the same foldback curve as the device comes out of current foldback. if the device is in shutdown mode, by inputting a low-level signal to the shdn pin, the current consumption is reduced to less than 0.1 a (typically 0.01 a). in shutdown mode, if the output capacitor is used, it will be discharged via the internal dedicated switch and, as a result, the output voltage quickly returns to 0v. the package options for the mcp1711 are the 4-lead 1 x 1 mm uqfn and the 5-lead sot-23, which make the device ideal for small and compact applications. 150 ma ultra-low quie scent current, capaci torless ldo regulator
mcp1711 ds20005415c-page 2 ? 2015-2016 microchip technology inc. package types typical application circuit functional block diagram 2 1 3 4 v in v out gnd gnd nc 1 2 3 v out v in shdn shdn mcp1711 1x1 uqfn* top view ep 5 * includes exposed thermal pad (ep); see ta b l e 3 - 1 mcp1711 sot-23 top view 5 4 v in shdn gnd v out v in c in on off c out v out mcp1711 0.1 f ceramic mcp1711 1x1 uqfn and sot-23 limit ref ? + err amp r 1 r 2 current shdn on/off control v out v in r dchg shdn to each block discharge transistor (dt) dt pmos
? 2015-2016 microchip technology inc. ds20005415c-page 3 mcp1711 1.0 electrical characteristics absolute maximum ratings ? input voltage, v in ............................................................................................................................... ......................+6.5v v in , shdn ............................................................................................................................... ................... -0.3v to +6.5v output current, i out ( 1 ) ............................................................................................................................... ..........470 ma output voltage, v out ( 2 ) ....................................................................................................... -0.3v to v in + 0.3v or +6.5v power dissipation 5-lead sot-23 ..................................................... 600 mw (jedec 51-7 fr-4 board with thermal vias) or 250 mw ( 3 ) 4-lead 1 x 1 mm uqfn ........................................ 550 mw (jedec 51-7 fr-4 board with thermal vias) or 100 mw ( 3 ) storage temperature ............................................................................................................ .................. -55 c to +125 c operating ambient temperature .................................................................................................. ............. -40 c to +85 c esd protection on all pins ........ ............................................................................................. ......1 kv hbm, 200v mm ? notice: stresses above those listed under ?absolute maximu m ratings? may cause permanent damage to the device. this is a stress rating only and functiona l operation of the device at those or an y other conditions above those indicated in the operational sections of this s pecification is not intended. exposure to maximum rating conditions for extended periods may affect device reliability. note 1: provided that the device is used in the range of i out ? p d /(v in - v out ). 2: the maximum rating corresponds to the lowest value between v in + 0.3v or +6.5v. 3: the device is mounted on one layer pcb with minimal c opper that does not provide any additional cooling. dc characteristics electrical characteristics: unless otherwise indicated, v shdn = v in , i out = 1 ma, c in = c out = 0 f, v in = 3.5v for v r < 2.5v and v in = v r + 1v for v r ? 2.5v, t a = +25c parameters sym. min. typ. max. units conditions input-output characteristics input voltage v in 1.4 ? 6.0 v i out = 1 a output voltage v out v r - 0.02 v r v r + 0.02 v v r < 2.0v v r x 0.99 v r v r x 1.01 v r ? 2.0v maximum output current i out 150 ? ? ma load regulation ? v out -16 3 +16 mv 1 a ? i out ? 1 ma -50 17 +50 1 ma ? i out ? 150 ma dropout voltage ( 1 ) v dropout1 ?v drop1 ( 2 ) vi out = 50 ma v dropout2 ?v drop2 ( 2 ) i out = 150 ma input quiescent current i q ? 0.60 1.27 a v r < 1.9v ? 0.65 1.50 1.9v ? v r < 4.0v ? 0.80 1.80 v r ? 4.0v input quiescent current for shdn mode i shdn ? 0.01 0.10 a v in = 6.0v v shdn = v in line regulation ? v out / ( ? v in x v out ) -0.13 0.01 +0.13 %/v i out = 1 a v r + 0.5v ? v in ? 6.0v -0.19 0.01 +0.19 i out = 1 ma vr ?? 1.2v, ? v r + 0.5v ? v in ? 6.0v note 1: the dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the output voltage value that was me asured with an applied input voltage of v in = v r + 1v. 2: v drop1 , v drop2 : dropout voltage (refer to the dc characteristics voltage table ).
mcp1711 ds20005415c-page 4 ? 2015-2016 microchip technology inc. output voltage temperature stability ? v out / ( ? t x v out ) ? 50 ? ppm/c i out = 10 ma -40c ? t a ? +85c current limit i limit 150 270 ? ma v out = 0.95 x v r output short-circuit foldback current i out_sc ?80 ? mav out = gnd c out auto-discharge resistance r dchg 280 450 640 ? shdn = gnd v out = v r noise e n ? 30 ? v(rms) c in = c out = 1 f, i out = 50 ma, f = 10 hz to 100 khz shutdown input shdn logic high input voltage v shdn -high 0.91 ? 6.00 v shdn logic low input voltage v shdn -low 0 ? 0.38 v shdn high-level current i shdn -high -0.1 ? +0.1 a v in = 6.0v shdn low-level current i shdn -low -0.1 ? +0.1 a v in = 6.0v shdn = gnd dc characteristics (continued) electrical characteristics: unless otherwise indicated, v shdn = v in , i out = 1 ma, c in = c out = 0 f, v in = 3.5v for v r < 2.5v and v in = v r + 1v for v r ? 2.5v, t a = +25c parameters sym. min. typ. max. units conditions note 1: the dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the output voltage value that was me asured with an applied input voltage of v in = v r + 1v. 2: v drop1 , v drop2 : dropout voltage (refer to the dc characteristics voltage table ). dc characteristics voltage table nominal output voltage output voltage (v) dropout voltage (v) v out v drop1 v drop1 v drop2 v drop2 v r (v) min. max. typ. max. typ. max. 1.2 1.1800 1.2200 0. 87 1.23 1.41 1.93 1.8 1.7800 1.8200 0. 47 0.72 0.99 1.40 2.2 2.1780 2.2220 0. 31 0.47 0.75 1.05 2.5 2.4750 2.5250 0. 26 0.40 0.67 0.92 3.0 2.9700 3.0300 0. 17 0.26 0.50 0.67 3.3 3.2670 3.3330 0. 17 0.26 0.50 0.67 5.0 4.9500 5.0500 0. 10 0.16 0.32 0.43
? 2015-2016 microchip technology inc. ds20005415c-page 5 mcp1711 temperature specifications ( note 1 ) parameters sym. min. typ. max. units conditions temperature ranges operating ambient temperature range t a -40 ? +85 c junction operating temperature t j -40 ? +125 c storage temperature range t a -55 ? +125 c package thermal resistances thermal resistance, 1 x 1 uqfn-4ld ? ja ? 181.82 ? c/w jedec 51-7 fr4 board with thermal vias ? ja ? 1000 ? c/w note 2 ? jc ?15?c/w thermal resistance, sot-23-5ld ? ja ? 166.67 ? c/w jedec 51-7 fr4 board with thermal vias ? ja ?400?c/w note 2 ? jc ?81?c/w note 1: the maximum allowable power dissipation is a functi on of ambient temperature, the maximum allowable junction temperature, and the thermal resistance from junction to air (i.e., t a , t j , ? ja ). exceeding the max- imum allowable power dissipation will cause the de vice operating junction temperature to exceed the maximum +125c rating. sustained junction temperat ures above +125c can impa ct the device reliability. 2: the device is mounted on one layer pcb with minimal co pper that does not provide any additional cooling.
mcp1711 ds20005415c-page 6 ? 2015-2016 microchip technology inc. 2.0 typical performance curves note: unless otherwise indicated, v in =3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-1: quiescent current vs. input voltage. figure 2-2: quiescent current vs. input voltage. figure 2-3: quiescent current vs. input voltage. figure 2-4: quiescent current vs. input voltage. figure 2-5: ground current vs. load current. figure 2-6: ground current vs. load current. note: the graphs and tables provided following this note ar e a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance char acteristics listed herein are not tested or guaranteed. in some graphs or t ables, the data presented may be outside the specified operating range (e.g., outside specified power suppl y range) and therefore outs ide the warranted range. 0.00 0.20 0.40 0.60 0.80 1.00 1.20 0123456 quiescent current (a) input voltage (v) t a = +25c t a = +85c v r = 1.2v t a = -40c 0 0.2 0.4 0.6 0.8 1 1.2 0123456 quiescent current (a) input voltage (v) t a = -40c t a = +25c t a = +85c v r = 1.8v 0.00 0.20 0.40 0.60 0.80 1.00 1.20 0123456 quiescent current (a) input voltage (v) v r = 3.3v t a = -40c t a = +25c t a = +85c 0.00 0.20 0.40 0.60 0.80 1.00 1.20 0123456 quiescent current (a) input voltage (v) t a = -40c t a = +25c t a = +85c v r = 5.0v 0 5 10 15 20 25 30 35 40 45 0 306090120150 ground current (a) load current (ma) v r = 1.2v 0 5 10 15 20 25 30 35 40 45 0 306090120150 ground current (a) load current (ma) v r = 1.8v
? 2015-2016 microchip technology inc. ds20005415c-page 7 mcp1711 note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-7: ground current vs. load current. figure 2-8: ground current vs. load current. figure 2-9: start-up from v in . . figure 2-10: start-up from v in . figure 2-11: start-up from v in . figure 2-12: start-up from v in . 0 5 10 15 20 25 30 35 40 0 30 60 90 120 150 ground current (a) load current (ma) v r = 3.3v 0 5 10 15 20 25 30 35 40 45 0 30 60 90 120 150 ground current (a) load current (ma) v r = 5.0v 0v 3.5v t r = 5 s time = 80 s/div v out (dc coupled, 0.5v/div) v r = 1.2v i out = 1 a i out = 10 ma i out = 150 ma v in v out 0v 3.5v t r = 5 s time = 80 s/div v out (dc coupled, 1v/div) v r = 1.8v i out = 1 a i out = 10 ma i out = 150 ma v in v out 0v 4.3v t r = 5 s time = 80 s/div v out (dc coupled, 1v/div) v r = 3.3v i out = 1 a i out = 10 ma i out = 150 ma v in v out 0v 6.0 v t r = 5 s time = 80 s/div v out (dc coupled, 2v/div) v r = 5.0v i out = 1 a i out = 10 ma i out = 150 ma v in v out
mcp1711 ds20005415c-page 8 ? 2015-2016 microchip technology inc. note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-13: start-up from v in . figure 2-14: start-up from v in . figure 2-15: start-up from v in . figure 2-16: start-up from v in . figure 2-17: start-up from shdn . figure 2-18: start-up from shdn . 0v 3.5v t r = 5 s time = 80 s/div v out (dc coupled, 0.5v/div) i out = 10 ma i out = 100 ma i out = 150 ma v r = 1.2v c in = c out =1 f v in v out 0v 3.5v t r = 5 s time = 80 s/div v out (dc coupled, 1v/div) i out = 10 ma i out = 100 ma i out = 150 ma v r = 1.8v c in = c out =1 f v in v out 0v 4.3v t r = 5 s time = 80 s/div v out (dc coupled, 1v/div) i out = 10 ma i out = 100 ma i out = 150 ma v r = 3.3v c in = c out =1 f v in v out 0v 6.0 v t r = 5 s time = 80 s/div v out (dc coupled, 2v/div) i out = 10 ma i out = 100 ma i out = 150 ma v r = 5.0v c in = c out =1 f v in i out 0v 3.5v t r = 5 s time = 80 s/div v out (dc coupled, 0.5v/div) v r = 1.2v i out = 1 a i out = 10 ma i out = 150 ma en v out 0v 3.5v t r = 5 s time = 80 s/div v out (dc coupled, 1v/div) v r = 1.8v i out = 1 a i out = 10 ma i out = 150 ma shdn v out
? 2015-2016 microchip technology inc. ds20005415c-page 9 mcp1711 note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-19: start-up from shdn. figure 2-20: start-up from shdn. figure 2-21: output voltage vs. output current. figure 2-22: output voltage vs. output current. figure 2-23: output voltage vs. output current. figure 2-24: output voltage vs. output current. 0v 4.3v t r = 5 s time = 80 s/div v out (dc coupled, 1v/div) v r = 3.3v i out = 1 a i out = 10 ma i out = 150 ma shdn v out 0v 6.0 v t r = 5 s time = 80 s/div v out (dc coupled, 2v/div) v r = 5.0v i out = 1 a i out = 10 ma i out = 150 ma shdn v out 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 0 50 100 150 200 250 output voltage (v) output current (ma) v in = 2.5v v in = 3.5v v in = 4.5v v in = 6.0v v r = 1.2v 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 0 50 100 150 200 250 300 output voltage (v) output current (ma) v r = 1.8v v in = 2.5v v in = 3.5v v in = 4.5v v in = 6.0v 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 0 50 100 150 200 250 300 350 output voltage (v) output current (ma) v in = 5.0v v in = 4.3v v in = 3.6v v in = 6.0v v r = 3.3v 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 0 50 100 150 200 250 300 350 400 output voltage (v) output current (ma) v in = 5.5v v in = 6.0v v r = 5.0v v in = 5.5v v in = 6.0v v r = 5.0v v in = 5.5v v in = 6.0v v r = 5.0v v in = 5.5v v in = 5.2v v in = 6.0v v r = 5.0v
mcp1711 ds20005415c-page 10 ? 2015-2016 microchip technology inc. note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-25: output voltage vs. output current. figure 2-26: output voltage vs. output current. figure 2-27: output voltage vs. output current. figure 2-28: output voltage vs. output current. figure 2-29: output voltage vs. input voltage. figure 2-30: output voltage vs. input voltage. 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 0 50 100 150 200 250 output voltage (v) output current (ma) v r = 1.2v t a = -40c t a = +85c t a = +25c 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 0 50 100 150 200 250 300 output voltage (v) output current (ma) v r = 1.8v t a = +85c t a = +25c t a = -40c 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 0 50 100 150 200 250 300 350 output voltage (v) output current (ma) v r = 3.3v t a = +85c t a = +25c v r = 3.3v t a = +85c t a = +25c v r = 3.3v t a = +85c t a = +25c v r = 3.3v t a = +85c t a = +25c v r = 3.3v t a = +85c t a = +25c v r = 3.3v t a = -40c t a = +85c t a = +25c v r = 3.3v t a = +85c t a = +25c 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 0 50 100 150 200 250 300 350 output voltage (v) output current (ma) t a = +85c t a = +25c t a = +85c t a = +25c t a = +85c t a = +25c v r = 5.0v t a = +85c t a = +25c t a = +85c t a = +25c t a = +85c t a = +25c t a = +85c t a = +25c t a = -40c t a = +85c t a = +25c 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 0123456 output voltage (v) input voltage (v) v r = 1.2v i out = 1 a i out = 1 ma i out = 10 ma i out = 100 ma 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 0123456 output voltage (v) input voltage (v) v r = 1.8v i out = 100 ma i out = 1 a i out = 1 ma i out = 10 ma
? 2015-2016 microchip technology inc. ds20005415c-page 11 mcp1711 note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-31: output voltage vs. input voltage. figure 2-32: output voltage vs. input voltage. figure 2-33: output voltage vs. ambient temperature. figure 2-34: output voltage vs. ambient temperature. figure 2-35: output voltage vs. ambient temperature. figure 2-36: output voltage vs. ambient temperature. 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 0123456 output voltage (v) input voltage (v) v r = 3.3v i out = 100 ma i out = 1 a i out = 1 ma i out = 10 ma 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 0123456 output voltage (v) input voltage (v) v r = 5.0v v r = 5.0v i out = 100 ma i out = 1 a i out = 1 ma i out = 10 ma 1.15 1.16 1.17 1.18 1.19 1.20 1.21 1.22 1.23 1.24 1.25 -40 -15 10 35 60 85 output voltage (v) ambient temperature (c) v r = 1.2v i out = 100 ma i out = 10 ma i out = 1 ma i out = 1 a 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 -40 -15 10 35 60 85 output voltage (v) ambient temperature (c) v r = 1.8v i out = 100 ma i out = 1 a i out = 1 ma i out = 10 ma 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 -40 -15 10 35 60 85 output voltage (v) ambient temperature (c) v r = 3.3v i out = 100 ma i out = 10 ma i out = 1 ma i out = 1 a 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 -40 -15 10 35 60 85 output voltage (v) ambient temperature (c) v r = 5.0v i out = 100 ma i out = 10 ma i out = 1 ma i out = 1 a
mcp1711 ds20005415c-page 12 ? 2015-2016 microchip technology inc. note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-37: dropout voltage vs. output current. figure 2-38: dropout voltage vs. output current. figure 2-39: dropout voltage vs. output current. figure 2-40: dropout voltage vs. output current. figure 2-41: shutdown threshold voltage vs. ambient temperature. figure 2-42: dynamic line response. 0 200 400 600 800 1000 1200 1400 1600 1800 0 25 50 75 100 125 150 dropout voltage (mv) output current (ma) v r = 1.2v t a = +85c t a = +25c t a = -40c 0 200 400 600 800 1000 1200 1400 0 255075100125150 dropout voltage (mv) output current (ma) v r = 1.8v t a = +85c t a = +25c t a = -40c 0 50 100 150 200 250 300 350 400 450 500 0 25 50 75 100 125 150 dropout voltage (mv) load current (ma) v r = 3.3v t a = +85c t a = +25c t a = -40c 0 50 100 150 200 250 300 350 400 450 0 25 50 75 100 125 150 dropout voltage (mv) load current (ma) v r = 5.0v t a = +85c t a = +25c t a = -40c 0.00 0.20 0.40 0.60 0.80 1.00 -40-1510356085 shdn threshold voltage (v) ambient temperature (c) v r = 1.2v to 5.0v shdn high level shdn low level 3.5v 4.5v t r = 5 s t f = 5 s v out (ac coupled, 500 mv/div) v r = 1.2v v in = 3.5v to 4.5v i out = 10 ma time = 80 s/div v in v out
? 2015-2016 microchip technology inc. ds20005415c-page 13 mcp1711 note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-43: dynamic line response. figure 2-44: dynamic line response. figure 2-45: dynamic line response. figure 2-46: dynamic line response. figure 2-47: dynamic line response. figure 2-48: dynamic line response. 3.5v 4.5v t r = 5 s t f = 5 s v out (ac coupled, 500 mv/div) v r = 1.2v v in = 3.5v to 4.5v i out = 100 ma time = 80 s/div v in v out 3.5v 4.5v t r = 5 s t f = 5 s v out (ac coupled, 500 mv/div) v r = 1.8v v in = 3.5v to 4.5v i out = 10 ma time = 80 s/div v in v out 3.5v 4.5v t r = 5 s t f = 5 s v out (ac coupled, 500 mv/div) v r = 1.8v v in = 3.5v to 4.5v i out = 100 ma time = 80 s/div v in v out v r = 3.3v v in = 4.3v to 5.3v i out = 10 ma time = 80 s/div v out (ac coupled, 500 mv/div) 5.3v t r = 5 s 4.3v t f = 5 s v in v out v r = 3.3v v in = 4.3v to 5.3v i out = 100 ma time = 80 s/div v out (ac coupled, 500 mv/div) 5.3v t r = 5 s 4.3v t f = 5 s v in v out 5.2v 6.0v t r = 5 s t f = 5 s v out (ac coupled, 500 mv/div) v r = 5.0v v in = 5.2v to 6.0v i out = 10 ma time = 80 s/div v in v out
mcp1711 ds20005415c-page 14 ? 2015-2016 microchip technology inc. note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-49: dynamic line response. figure 2-50: dynamic load response. figure 2-51: dynamic load response. figure 2-52: dynamic load response. figure 2-53: dynamic load response. figure 2-54: dynamic load response. 5.5v 6.0v t r = 5 s t f = 5 s v out (ac coupled, 500 mv/div) v r = 5.0v v in = 5.5v to 6.0v i out = 100 ma time = 80 s/div 6.0v v in v out 1 a 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) v r = 1.2v v in = 3.5v i out = 1 a to 150 ma time = 200 s/div 1 t r set time = 5 s i out v out i out v out 1 a 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) v r = 1.2v v in = 3.5v i out = 1 a to 150 ma time = 200 s/div 1 t r set time = 5 s c in = c out = 1 f 1 ma 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) v r = 1.2v v in = 3.5v i out = 1 ma to 150 ma time = 200 s/div 1 t r set time = 5 s v out i out i out v out 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) time = 200 s/div 1 t r set time = 5 s v r = 1.2v v in = 3.5v i out = 1 ma to 150 ma c in = c out = 1 f 1 a 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) v r = 1.8v v in = 3.5v i out = 1 a to 150 ma time = 200 s/div 1 t r set time = 5 s v out i out
? 2015-2016 microchip technology inc. ds20005415c-page 15 mcp1711 note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-55: dynamic load response. figure 2-56: dynamic load response. figure 2-57: dynamic load response. figure 2-58: dynamic load response. figure 2-59: dynamic load response. figure 2-60: dynamic load response. i out v out 1 a 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) time = 200 s/div 1 t r set time = 5 s c in = c out = 1 f v r = 1.8v v in = 3.5v i out = 1 a to 150 ma 1 ma 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) v r = 1.8v v in = 3.5v i out = 1 ma to 150 ma time = 200 s/div 1 t r set time = 5 s i out v out i out v out 1 ma 150 ma t r 1 t f = 5 s v r = 1.8v v in = 3.5v i out = 1 ma to 150 ma time = 200 s/div 1 t r set time = 5 s c in = c out = 1 f 1 a 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) v r = 3.3v v in = 4.3v i out = 1 a to 150 ma time = 200 s/div 1 t r set time = 5 s i out v out i out v out 1 a 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) time = 200 s/div 1 t r set time = 5 s c in = c out = 1 f v r = 3.3v v in = 4.3v i out = 1 a to 150 ma 1 ma 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) v r = 3.3v v in = 4.3v i out = 1 ma to 150 ma time = 200 s/div 1 t r set time = 5 s i out v out
mcp1711 ds20005415c-page 16 ? 2015-2016 microchip technology inc. note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-61: dynamic load response. figure 2-62: dynamic load response. figure 2-63: dynamic load response. figure 2-64: dynamic load response. figure 2-65: dynamic load response. figure 2-66: output noise vs. frequency. i out v out 1 ma 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) v r = 3.3v v in = 4.3v i out = 1 ma to 150 ma time = 200 s/div 1 t r set time = 5 s c in = c out = 1 f 1 a 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) time = 200 s/div 1 t r set time = 5 s i out v out v r = 5.0v v in = 6.0v i out = 1 a to 150 ma i out v out 1 a 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) v r = 5.0v v in = 6.0v i out = 1 a to 150 ma time = 200 s/div 1 t r set time = 5 s c in = c out = 1 f 1 ma 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) v r = 5.0v v in = 6.0v i out = 1 ma to 150 ma time = 200 s/div 1 t r set time = 5 s i out v out i out v out 1 ma 150 ma t r 1 t f = 5 s v out (ac coupled, 1v/div) v r = 5.0v v in = 6.0v i out = 1 ma to 150 ma time = 200 s/div 1 t r set time = 5 s c in = c out = 1 f 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 output noise (v/ hz) frequency (khz) v r = 3.3v v in = 4.3v v r = 5.0v v in = 6.0v v r = 1.8v v in = 3.5v c in = 1 f, c out = 1 f, i out = 50 ma
? 2015-2016 microchip technology inc. ds20005415c-page 17 mcp1711 note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-67: power supply ripple rejection vs. frequency. figure 2-68: power supply ripple rejection vs. frequency. figure 2-69: power supply ripple rejection vs. frequency. figure 2-70: power supply ripple rejection vs. frequency. figure 2-71: power supply ripple rejection vs. frequency. figure 2-72: power supply ripple rejection vs. frequency. -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) v r = 1.2v v in = 3.5v v inac = 0.5vpk-pk c in = 0 f c out = 0 f i out = 10 ma i out = 150 ma -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) i out = 150 ma i out = 10 ma v r = 1.2v v in = 3.5v v inac = 0.5vpk-pk c in = 0 f c out = 1 f -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) i out = 150 ma v r = 1.8v v in = 3.5v v inac = 0.5vpk-pk c in = 0 f c out = 0 f i out = 10 ma -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) v r = 1.8v v in = 3.5v v inac = 0.5vpk-pk c in = 0 f c out = 1 f i out = 10 ma i out = 150 ma -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) v r = 3.3v v in = 4.3v v inac = 0.5vpk-pk c in = 0 f c out = 0 f i out = 10 ma i out = 150 ma -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) v r = 3.3v v in = 4.3v v inac = 0.5vpk-pk c in = 0 f c out = 1 f i out = 10 ma i out = 150 ma
mcp1711 ds20005415c-page 18 ? 2015-2016 microchip technology inc. note: unless otherwise indicated, v in = 3.5v for v r < 2.5v or v in = v r + 1v for v r ? 2.5v, i out = 1 ma, c in =c out =0f, v shdn = v in , t a = +25c. figure 2-73: power supply ripple rejection vs. frequency. figure 2-74: power supply ripple rejection vs. frequency. -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) v r = 5.0v v in = 5.75v v inac = 0.5vpk-pk c in = 0 f c out = 0 f i out = 10 ma i out = 150 ma -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.01 0.1 1 10 100 1000 psrr (db) frequency (khz) v r = 5.0v v in = 5.75v v inac = 0.5vpk-pk c in = 0 f c out = 1 f i out = 10 ma i out = 150 ma
? 2015-2016 microchip technology inc. ds20005415c-page 19 mcp1711 3.0 pin descriptions the descriptions of the pins are listed in table 3-1 . 3.1 unregulated input voltage (v in ) connect the v in pin to the output of the unregulated source voltage. like all low dropout linear regulators, low-source impedance is necessary for ensuring stable operation of the ldo. th e amount of capacitance required to ensure low-source impedance will depend on the proximity of the input source capacitors or bat- tery type. for most applications, 0.1 f of capacitance will ensure stable operation of the ldo circuit. if the output capacitor is used, the input capacitor should have a capacitance value equal to or greater than the output capacitor for performance applications. the input capacitor will supply the load current during transients and improve performance. for applications that have low load currents, the input capacitance requirement can be lowered. the type of capacitor used may be ceramic, tantalum or aluminum electrolytic. the low esr characteristics of the ceramic will yield better noise and power supply rejection ratio (psrr) performance at high frequency. 3.2 ground terminal (gnd) this is the regulator grou nd. tie gnd to the negative side of the output capacitor (if used) and to the negative side of the input capacitor. only the ldo bias current flows out of this pin, so there is no high current. the ldo output regulation is referenced to this pin. mini- mize voltage drops between this pin and the negative side of the load. if a pcb ground plane is not used, min- imize the length of the tr ace between the gnd pin and the ground line. 3.3 shutdown input (shdn ) the shdn input is used to turn the ldo output voltage on and off. when the shdn input is at logic high level, the ldo output voltage is enabled. when the shdn pin is pulled to a logic low level, the ldo output voltage is disabled. when the shdn pin is pulled low, the v out pin is pulled down to the ground level via, parallel to the feed- back resistors (r 1 and r 2 ), and the c out discharge resistance (r dchg ). the output voltage becomes unstable when the shdn pin is left floating. 3.4 not connected pin (nc) the sot-23 package has a pin that is not con- nected.this pin should be either left floating or tied to the ground plane. 3.5 regulated output voltage (v out ) connect the v out pin to the positive side of the load and to the positive side of the output capacitor (if used). the positive side of the output capacitor should be physically located as close as possible to the ldo v out pin. the current flowing out of this pin is equal to the dc load current. 3.6 exposed thermal pad (ep) the 4-lead 1 x 1 uqfn package has an exposed metal pad on the bottom of the package. the exposed metal pad gives the device better thermal characteristics by providing a good thermal path to either a pcb isolated plane or a pcb ground plane. the exposed pad of the package is not internally connected to gnd. table 3-1: pin function table mcp1711 1x1 uqfn mcp1711 sot-23 symbol description 41v in unregulated input supply voltage 2 2 gnd ground terminal 3 3 shdn shutdown input ? 4 nc not connected (sot-23 only) 15v out regulated voltage output 5 ? ep exposed thermal pad (1x1 uqfn only)
mcp1711 ds20005415c-page 20 ? 2015-2016 microchip technology inc. 4.0 device overview the mcp1711 device is a 150 ma output current, low-dropout (ldo) voltage regulator. the low dropout voltage at high current makes it ideal for battery-pow- ered applications. the input voltage ranges from 1.4v to 6.0v. unlike other high output current ldos, the mcp1711 typically draws only 600 na quiescent cur- rent and maximum 45 a ground current at 150 ma load. mcp1711 has a shutdown control input pin (shdn ). the output voltage options are fixed. 4.1 ldo output voltage the mcp1711 ldo has a fixed output voltage. the output voltage range is 1.2v to 5.0v. 4.2 output current and current limiting the mcp1711 is tested and ensured to supply a maxi- mum of 150 ma of output current. the device can pro- vide a highly accurate output voltage even if the output current is only 1 a (very light load). the mcp1711 also features a true output current fold- back. if an excessive load, due to a low impedance short-circuit condition at th e output load, is detected, the output current and voltage will fold back towards 80 ma and 0v, respectively. the output voltage and current will resume normal levels when the excessive load is removed. if the over load condition is a soft over- load, the mcp1711 will supply higher load currents of up to 270 ma typical. this allows for device usage in applications that have pulsed load currents having an average output current va lue of 150 ma or less. 4.3 output capacitor the mcp1711 can provide a stable output voltage even without an additional output capacitor due to its excel- lent internal phase compensation, so that a minimum output capacitance is not required. in order to improve the load step response and psrr, an output capacitor can be added. a value in the range of 0.1 f to 1.0 f is recommended for most applications. the capacitor should be placed as close as possible to the v out pin and the gnd pin. the device is compatible with low esr ceramic capacitors. ce ramic materials like x7r and x5r have low temperature coefficients and are well within the acceptable esr range required. a typical 1 f x7r 0805 capacitor has an esr of 50 m ? . 4.4 input capacitor low-input source impedance is necessary for the ldo output to operate properly. when operating from batter- ies, or in applications with long lead length (> 10 inches) between the input source and the ldo, some input capacitance is recommended. a minimum of 0.1 f to 1.0 f is recommended for most applica- tions. for applications that have output step load requirements, the input capa citance of the ldo is very important. the input capacitance provides the ldo with a good local low-impedance source to pull the transient current from, so it responds quickly to the out- put load step. for good step response performance, the input capacitor should be of an equivalent or higher value than the output capacitor. the capacitor should be placed as close to the input of the ldo as is practi- cal. larger input capacitors will also help reduce any high-frequency noise on the input and output of the ldo as well as reduce the effects of any inductance that exists between the in put source voltage and the input capacitance of the ldo.
? 2015-2016 microchip technology inc. ds20005415c-page 21 mcp1711 4.5 shutdown input (shdn ) the mcp1711 internal circuitry can be shut down via the signal from the shdn pin. the shdn input is an active-low input signal that turns the ldo on and off. the shutdown threshold is a fixed voltage level. the minimum value of this shutdown threshold required to turn the output on is 0.91v. the maximum value required to turn the output off is 0.38v. in shutdown mode, the v out pin will be pulled down to the ground level via, parallel to feedback resistors and c out discharge resistance r dchg . in this state, the application is protected from a glitch operation caused by the electric charge at the output capacitor. more- over, the discharge time of the output capacitor is set by the c out auto-discharge resistance (r dchg ) and the output capacitor c out . by setting the time constant of a c out auto-discharge resistance value (r dchg ) and the output capacitor value (c out ) as ? =c out x r dchg , the output voltage after discharge via the internal switch is calculated using equation 4-1 : equation 4-1: 4.6 dropout voltage dropout voltage is defined as the input-to-output volt- age differential at which the output voltage drops 2% below the nominal value t hat was measured with a v r + 1.0v differential applied. see section 1.0 ?elec- trical characteristics? , for minimum and maximum voltage specifications. note: the r dchg depends on v in ; when v in is high the r dchg is low. v out t ?? v out e t ? ? ? ?? ? = where: v out (t) = the output voltage during discharging v out = the initial output voltage t = discharge time ? =c out x r dchg or t ? ln ? v out v out t ?? ? ?? =
mcp1711 ds20005415c-page 22 ? 2015-2016 microchip technology inc. 5.0 application circuits and issues 5.1 typical application the mcp1711 is most commonly used as a voltage regulator. its low quiescent current and low dropout voltage make it ideal for a multitude of battery-powered applications. figure 5-1: typical application circuit. 5.2 power calculations 5.2.1 power dissipation the internal power dissipation of the mcp1711 is a function of input voltage, output voltage and output current. the power dissipation, as a result of the quies- cent current draw, is so low that it is insignificant (0.6 a x v in ). to calculate the internal power dissipation of the ldo use equation 5-1 : equation 5-1: the maximum continuous operating junction temperature specified for the mcp1711 is +125c . to estimate the internal junction temperature of the mcp1711, the total internal power dissipation is multi- plied by the thermal resistance from junction-to-ambient (r ? ja ). the thermal resistance from junction-to-ambient for the 5-lead sot-23 package is estimated at: ? 166.67c with jedec 51-7 fr-4 board with thermal vias and ? 400 c/w when the device is not mounted on the pcb, or is mounted on the one layer pcb with minimal copper that doesn't provide any additional cooling. equation 5-2: the maximum power dissipation capability for a package can be calculated if given the junc- tion-to-ambient thermal resistance (r ? ja ) and the max- imum ambient temperature for the application. equations 5-3 to 5-5 can be used to determine the package maximum internal power dissipation: equation 5-3: equation 5-4: v in shdn gnd v out v in c in c out mcp1711 i out = 50 ma application input conditions package type = 5-lead sot-23 input voltage range = 3.5v to 4.8v v in maximum = 4.8v v out typical = 1.8v i out = 50 ma maximum 3.6v to 4.8v v out = 1.8v where: p ldo = ldo pass device internal power dissipation v in(max) = maximum input voltage v out(min) = ldo minimum output voltage, including the line and load regulations p ldo v in ( max ? v out ( min ? ? i out max ?? ? ? ? = t jmax ?? p total r ? ja ? t amax ?? + = where: t j(max) = maximum continuous junction temperature p total = total device power dissipation r ? ja = thermal resistance from junction to ambient t a(max) = maximum ambient temperature p dmax ?? t jmax ?? t amax ?? ? ?? r ? ja ------------------ ----------------- -------------- - = where: p d(max) = maximum device power dissipation t j(max) = maximum continuous junction temperature t a(max) = maximum ambient temperature r ? ja = thermal resistance from junction to ambient t jrise ?? p dmax ?? r ? ja ? = where: t j(rise) = rise in device junction temperature over the ambient temperature p d(max) = maximum device power dissipation r ? ja = thermal resistance from junction to ambient
? 2015-2016 microchip technology inc. ds20005415c-page 23 mcp1711 equation 5-5: 5.3 voltage regulator internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. the power dissipation, as a result of ground current, is small enough to be neglected. 5.3.1 power dissipation example example 5-1: power dissipation 5.3.1.1 device juncti on temperature rise the internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. the ther- mal resistance from junction to ambient (r ? ja ) is derived from an eia/jedec standard for measuring thermal resistance for small surface mount packages. the eia/jedec specification is jesd51-7, high effec- tive thermal conductivity test board for leaded sur- face mount packages . the standard describes the test method and board specificat ions for measuring the thermal resistance from junction to ambient. the actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. refer to an792 ? a method to determine how much power a sot-23 can dissipate in an appli- cation (ds00792), for more information regarding this subject. example 5-2: 5.3.1.2 junction temperature estimate to estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. for th is example, the worst-case junction temperature is estimated: example 5-3: 5.3.1.3 maximum package power dissipation example at +40c ambient temperature example 5-4: package package type = sot-23 input voltage v in = 3.5v to 4.8v ldo output voltages and currents v out = 1.8v i out =50ma maximum ambien t temperature t a(max) =+40c internal power dissipation internal power dissipation is the product of the ldo output current times the voltage across the ldo (v in to v out ). p ldo(max) =(v in(max) - v out(min) ) x i out(max) v out(min) = 1.78v - 0.05v = 1.73v, where 1.78v is the minimum output voltage due to accuracy, and 0.05v is the load regulation; due to very small input voltage range, the line regulation is neglected p ldo = (4.8v - 1.73v) x 50 ma p ldo = 153.5 mw t j t jrise ?? t a + = where: t j = junction temperature t j(rise) = rise in device junction temperature over the ambient temperature t a = ambient temperature t j(rise) =p total x r ? ja t jrise = 153.5 mw x 400.0c/w t jrise = 61.4c t j =t jrise + t a(max) t j = 61.4c + 40c = 101.4c sot-23 (400.0 c/w = r ? ja ) p d(max) = (125c - 40c)/400c/w p d(max) =212 mw
mcp1711 ds20005415c-page 24 ? 2015-2016 microchip technology inc. 5.4 voltage reference the mcp1711 can be used not only as a regulator, but also as a low quiescent current voltage reference. in many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. when the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the mcp1711 ldo. the low cost, low quiescent cur- rent and small ceramic output capacitor are all advantages when using the mcp1711 as a voltage reference. figure 5-2: using the mcp1711 as a voltage reference. 5.5 pulsed load applications for some applications, there are pulsed load current events that may exceed the specified 150 ma maximum specification of the mcp1711. the internal current limit of the mcp1711 will prevent high peak-load demands from causing nonrecoverable damage. the 150 ma rating is a maximum average continuous rating. as long as the average current does not exceed 150 ma, higher pulsed load currents can be applied to the mcp1711 . the typical current limit for the mcp1711 is 270 ma (t a = +25c). pic ? mcp1711 gnd v in c in 0.1f c out 0.1f bridge sensor v out v ref ado ad1 ratio metric reference 0.6 a bias microcontroller
? 2015-2016 microchip technology inc. ds20005415c-page 25 mcp1711 6.0 packaging information 6.1 package marking information 4-lead uqfn (1x1x0.6 mm) example 5-lead sot-23 example device code mcp1711t-12i/ot 9a2xx mcp1711t-18i/ot 9a8xx mcp1711t-19i/ot 9a9xx mcp1711t-22i/ot 9acxx mcp1711t-25i/ot 9afxx mcp1711t-30i/ot 9anxx mcp1711t-33i/ot 9asxx mcp1711t-50i/ot 9baxx device code mcp1711t-12i/5x p2nn mcp1711t-18i/5x p8nn mcp1711t-22i/5x pcnn mcp1711t-25i/5x pfnn mcp1711t-30i/5x pnnn mcp1711t-33i/5x psnn mcp1711t-50i/5x rann xx nn p2 56 9a802 legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part nu mber cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e
mcp1711 ds20005415c-page 26 ? 2015-2016 microchip technology inc. b a 0.05 c 0.05 c c seating plane 2x top view side view bottom view n 3 microchip technology drawing c04-393b sheet 1 of 2 2x for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: 4-lead plastic ultra thin quad flatpack no-leads (5x) - 1x1x0.6mm [uqfn] d e a l1 l2 e 4x b d2 e2 3x ch (datum a) (datum b) 1 2 n 3 1 2 l3 3x ch (formerly uspq-4b04)
? 2015-2016 microchip technology inc. ds20005415c-page 27 mcp1711 microchip technology drawing c04-393b sheet 2 of 2 number of terminals overall height terminal width overall width overall length terminal length exposed pad width exposed pad length pitch units dimension limits a b d e2 d2 e l1 e n 0.65 bsc 0.43 0.20 - 0.25 0.48 - 1.00 bsc millimeters min nom 4 0.53 0.30 0.60 max ch 0.18 -- ref: reference dimension, usually without tolerance, for information purposes only. bsc: basic dimension. theoretically exact value shown without tolerances. 1. 2. 3. notes: pin 1 visual index feature may vary, but must be located within the hatched area. package is saw singulated dimensioning and tolerancing per asme y14.5m terminal chamfer for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: terminal length l2 0.27 0.32 0.37 l3 0.02 0.07 0.12 0.43 0.48 1.00 bsc 0.53 0.20 0.25 0.30 - 4-lead plastic ultra thin quad flatpack no-leads (5x) - 1x1x0.6mm [uqfn] (formerly uspq-4b04)
mcp1711 ds20005415c-page 28 ? 2015-2016 microchip technology inc. recommended land pattern dimension limits units y1 x2 x1 0.18 0.25 millimeters 0.65 bsc min e max 0.40 y3 y2 0.22 0.47 microchip technology drawing c04-2393b nom 1 2 4 x4 0.48 y4 0.48 bsc: basic dimension. theoretically exact value shown without tolerances. notes: dimensioning and tolerancing per asme y14.5m 1. for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging note: e 4x x1 y2 y4 3x y1 4x y3 3x x2 x4 silk screen 4-lead plastic ultra thin quad flatpack no-leads (5x) - 1x1x0.6mm [uqfn] (formerly uspq-4b04)
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mcp1711 ds20005415c-page 30 ? 2015-2016 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging
? 2015-2016 microchip technology inc. ds20005415c-page 31 mcp1711 appendix a: revision history revision c (march 2016) the following is the list of modifications: minor typographical corrections revision b (october 2015) the following is the list of modifications: ? updated thermal resistances in section 1.0, electrical characteristics . ? updated section 2.0, typical performance curves with new load step screenshots. revision a (june 2015) original release of this document.
mcp1711 ds20005415c-page 32 ? 2015-2016 microchip technology inc. notes:
? 2015-2016 microchip technology inc. ds20005415c-page 33 mcp1711 product identification system to order or obtain information, e.g., on pricing or delivery, contact your local microchip representative or sales office . examples: a) mcp1711t-12i/ot: tape and reel 1.2v output voltage industrial temperature 5ld sot-23 b) mcp1711t-18i/ot: tape and reel 1.8v output voltage industrial temperature 5ld sot-23 c) mcp1711t-19i/ot: tape and reel 1.9v output voltage industrial temperature 5ld sot-23 d) mcp1711t-22i/ot: tape and reel 2.2v output voltage industrial temperature 5ld sot-23 e) mcp1711t-25i/ot: tape and reel 2.5v output voltage industrial temperature 5ld sot-23 f) mcp1711t-30i/ot: tape and reel 3.0v output voltage industrial temperature 5ld sot-23 g) mcp1711t-33i/ot: tape and reel 3.3v output voltage industrial temperature 5ld sot-23 h) mcp1711t-50i/ot: tape and reel 5v output voltage industrial temperature 5ld sot-23 a) mcp1711t-12i/5x: tape and reel 1.2v output voltage industrial temperature 4ld uqfn b) mcp1711t-18i/5x: tape and reel 1.8v output voltage industrial temperature 4ld uqfn c) mcp1711t-22i/5x: tape and reel 2.2v output voltage industrial temperature 4ld uqfn d) mcp1711t-25i/5x: tape and reel 2.5v output voltage industrial temperature 4ld uqfn e) mcp1711t-30i/5x: tape and reel 3.0v output voltage industrial temperature 4ld uqfn f) mcp1711t-33i/5x: tape and reel 3.3v output voltage industrial temperature 4ld uqfn part no. /xx package device device: mcp1711: 150 ma ultra-low quiescent current, capacitorless ldo regulator output voltage: 12 = 1.2v 18 = 1.8v 19 = 1.9v 22 = 2.2v 25 = 2.5v 30 = 3.0v 33 = 3.3v 50 = 5.0v temperature range: i = -40c to +85c (industrial) packages: ot = plastic small outline transistor, 5-lead sot-23 5x = plastic ultra thin quad flatpack no-leads, 4-lead 1x1 uqfn [x] ( 1 ) note 1: tape and reel identifier only appears in the catalog part number description. this identifier is used for ordering purposes and is not printed on the device package. check with your microchip sales office for package availability with the tape and reel option. -x output voltage x temperature range tape and reel option
mcp1711 ds20005415c-page 34 ? 2015-2016 microchip technology inc. notes:
? 2015-2016 microchip technology inc. ds20005415c-page 35 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application me ets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safe ty applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting fr om such use. no licenses are conveyed, implicitly or ot herwise, under any microchip intellectual property rights unless otherwise stated. trademarks the microchip name and logo, the microchip logo, anyrate, dspic, flashflex, flexpwr, heldo, jukeblox, keeloq, keeloq logo, kleer, lancheck, link md, medialb, most, most logo, mplab, optolyzer, pic, picstart, pic32 logo, righttouch, spynic, sst, sst logo, superflash and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. clockworks, the embedded control solutions company, ethersynch, hyper speed control, hyperlight load, intellimos, mtouch, precision edge, and quiet-wire are registered trademarks of microc hip technology incorporated in the u.s.a. analog-for-the-digital age, any capacitor, anyin, anyout, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, dynamic average matching, dam, ecan, ethergreen, in-circuit serial programming, icsp, inter-chip connectivity, jitterblocker, kleernet, kleernet logo, miwi, motorbench, mpasm, mpf, mplab certified logo, mplib, mplink, multitrak, netdetach, omniscient code generation, picdem, picdem.net, pickit, pictail, puresilicon, righttouch logo, real ice, ripple blocker, serial quad i/o, sqi, superswitcher, superswitcher ii, total endurance, tsharc, usbcheck, varisense, viewspan, wiperlock, wireless dna, and zena are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. gestic is a registered tradem arks of microchip technology germany ii gmbh & co. kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2015-2016, microchip technology incorporated, printed in the u.s.a., all rights reserved. isbn: 978-1-5224-0408-8 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal meth ods used to breach the code protection fe ature. all of these methods, to our knowledge, require using the microchip pr oducts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchip?s c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwa re or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microper ipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem by dnv == iso/ts 16949 ==
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